LabAdviser/314/Microscopy 314-307/FIB/Helios: Difference between revisions
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- Ion beam: 7 nm @ 30 kV @ 1 pA | - Ion beam: 7 nm @ 30 kV @ 1 pA | ||
Attachments | Attachments | ||
- Gas Injection System (GIS) for W and Pt both E and I beams. C deposition E beam only. XeF2 and H2O etching Ion beam only. | - Gas Injection System (GIS) for W and Pt both E and I beams. C deposition E beam only. XeF2 and H2O etching Ion beam only. | ||