Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing: Difference between revisions

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 Acceptance criteria on a 100 X 100 mm<sup>2</sup> area: Width of smallest resolved line 1000±100 nm (quality), alignment error 500 nm (quality), writing speed 1100 mm<sup>2</sup>/min (fast).
-The acceptance test also included a verification of back side alignment (better than 1 µm), as well as
+The acceptance test also included a verification of back side alignment (better than 1 µm), as well as ??
+'''Exposed on mask blank, transferred via wet chrome etch, and measured at Heidelberg (FAT)'''
+{|border="1" cellspacing="0" cellpadding="3" style="text-align:center;"
+|-
+|-
+|-style="background:silver; color:black"
+!colspan="2"|SAT Feb 2019
+!Width of smallest resolved line [nm]
+!Alignment error (TSA) [nm]
+!Exposure speed [mm<sup>2</sup>/min]
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+|rowspan="2"|405 nm
+|'''X'''
+| 532±64
+| 251
+|rowspan="2" align="mid"| 333
+|-
+|-style="background:WhiteSmoke; color:black"
+|'''Y'''
+| 599±58
+| 382
+|}