Specific Process Knowledge/Thermal Process

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Choose a process type

• Oxidation - Grow a thermal oxide on silicon
• Annealing
• Doping with Boron
• Doping with Phosphorus

Choose an equipment to use

A stack furnaces:

• Boron Drive-in + Predep furnace (A1) - For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards
• Gate Oxide furnace (A2) - For gate oxide growing on new wafers
• Phosphorus Drive-in furnace (A3) - For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep
• Phosphorus Predep furnace (A4) - For pre-deposition (doping) of phosphorus on Si wafers

C stack furnaces:

• Anneal-oxide furnace (C1) - For oxidation and annealing of 100 mm and 150 mm wafers
• III-V oxidation furnace (C2) - For oxidation of Al_xGaAs layers.
• Anneal-bond furnace (C3) - For oxidation and annealing of bonded wafers
• Aluminium Anneal furnace (C4) - For annealing of wafers containing aluminium, Al₂O₃ and TiO₂

Other furnaces:

• Furnace: Multipurpose annealing - For annealing, oxidation and resist pyrolysis
• Jipelec RTP - For rapid thermal annealing of III-V materials and Si based materials
• BCB Curing oven - For resist curing and metal alloyinglayers

Rules for storage and RCA cleaning of wafers to the A and C stack furnaces

• Storage and cleaning of wafer to the A and C stack furnaces

Manual for the furnace computer to the A, B, C and E stack furnaces

Furnace_computer_manual.pdf

Decommissioned equipment

• APOX furnace - For growing of very thick oxide layers
• III-V Oven (D4) - For oxidation of Al_xGaAs layers.
• Resist Pyrolysis furnace - For pyrolysis of different resist
• Noble furnace - For annealing and oxidation of non-clean wafers