Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions

Thin films of titanium nitride can only be deposited in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]] at the moment. More information about the process can be found [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|here]].

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![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]

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!Generel description

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*Atomic Layer Deposition

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!Stoichiometry

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*TiN

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!Film Thickness

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* 0nm - 50nm  

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!Deposition rate

* 0.0173 nm/cycle on a flat sample

* 0.0232 nm/cycle on a high aspect ratio structures

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!Step coverage

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*Very good

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!Process Temperature

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* 450^oC

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!Substrate size

*1-5 100 mm wafers

*1-5 150 mm wafer

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!'''Allowed materials'''

*III-V materials (use dedicated carrier wafer)

*Polymers (depending on the melting point/deposition temperature, use carrier wafer)

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