Specific Process Knowledge/Pattern Design: Difference between revisions
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* For '''DUV-lithography''' and DUV-lithography it is necessary to have physical masks (reticles) produced based on the layout file. The file format has to be GDS. For more details concerning the design of reticles see [[Specific_Process_Knowledge/Lithography/DUVStepperLithography#Process_information|Design of Reticles]]. | * For '''DUV-lithography''' and DUV-lithography it is necessary to have physical masks (reticles) produced based on the layout file. The file format has to be GDS. For more details concerning the design of reticles see [[Specific_Process_Knowledge/Lithography/DUVStepperLithography#Process_information|Design of Reticles]]. | ||
== Mask | == Mask Design for UV-lithography == | ||
=== Tips and tricks for mask designing === | === Tips and tricks for mask designing === | ||
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=== Alignment marks for E-beam lithography === | === Alignment marks for E-beam lithography === | ||
If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ#Design_of_global_marks_and_chip_marks here]. | If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ#Design_of_global_marks_and_chip_marks here]. | ||
== Mask Ordering and Fabrication == | == Mask Ordering and Fabrication == | ||