Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing: Difference between revisions

Revision as of 11:11, 13 February 2020 view source Taran (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891 3,528 edits →Exposure technology ← Older edit		Revision as of 16:24, 14 February 2020 view source Taran (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891 3,528 edits →Exposure mode Newer edit →
Line 22:		Line 22:

	'''Fast''' mode is used for maximum exposure speed.		'''Fast''' mode is used for maximum exposure speed.
	In the fast mode, each area of the pattern is exposed by 2 stripes only. This effectively cuts the exposure time in half, but also ~~doubles~~ the size of the address grid in the X-direction. Due to less averaging of non-uniformities, stitching effects will be more prominent in this mode.		In the fast mode, each area of the pattern is exposed by 2 stripes only. This effectively cuts the exposure time in half, but also increases the size of the address grid in the X-direction to 250nm. Due to less averaging of non-uniformities, stitching effects will be more prominent in this mode.