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Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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{| border="1" style="text-align: center; width: 600px; height: 350px;"
{| border="1" style="text-align: center; width: 600px; height: 350px;"
! colspan="6" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min
! colspan="7" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min
|-
|-
! scope="row" width="15%" |Process Name
! scope="row" width="15%" |Process Name
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! width="10%" |AZ5206
! width="10%" |AZ5206
! width="10%" |ZEP520A
! width="10%" |ZEP520A
! width="10%" |Negative DUV: UVN 2030-0.5
|-
|-
!SiO2_602  
!SiO2_602  
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|29'''<sup>{(2)}</sup>'''
|29'''<sup>{(2)}</sup>'''
|36'''<sup>{(3)}</sup>'''
|36'''<sup>{(3)}</sup>'''
|&nbsp;
|-
|-
!?1
!?1 (high selectivity to resist
!
!
*CHF<sub>3</sub>-flow: 16 sccm,  
*CHF<sub>3</sub>-flow: 17 sccm,  
*O<sub>2</sub>-flow: 2 sccm,
*O<sub>2</sub>-flow: 0 sccm,
*Power = 60 W,
*Power = 150 W,
*Vbias = 325 V,
*Vbias = ? V,
*Process pressure = 100 mTorr
*Process pressure = 150 mTorr
|30'''<sup>{(1)}</sup>'''
|85
|&nbsp;
|&nbsp;
|&nbsp;
|&nbsp;
|29'''<sup>{(2)}</sup>'''
|10.6
|36'''<sup>{(3)}</sup>'''
|-
|-
!?2
!?2
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|29'''<sup>{(2)}</sup>'''
|29'''<sup>{(2)}</sup>'''
|36'''<sup>{(3)}</sup>'''
|36'''<sup>{(3)}</sup>'''
|&nbsp;
|-
|-
!Si3N4Ti
!Si3N4Ti
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|&nbsp;
|&nbsp;
|38
|38
|&nbsp;
|&nbsp;
|&nbsp;
|&nbsp;
|&nbsp;
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