Specific Process Knowledge/Thin film deposition/ALD2 (PEALD): Difference between revisions
| Line 76: | Line 76: | ||
|- | |- | ||
!style="background:silver; color:black;" align="center" width="60"|Purpose | !style="background:silver; color:black;" align="center" width="60"|Purpose | ||
|style="background:LightGrey; color:black"|Thermal ALD or PEALD deposition | |style="background:LightGrey; color:black"|Thermal ALD or PEALD deposition | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Al<sub>2</sub>O<sub>3</sub> - mainly backup for | *Al<sub>2</sub>O<sub>3</sub> - Thermal Al<sub>2</sub>O<sub>3</sub> (mainly backup for ALD1) and Al<sub>2</sub>O<sub>3</sub> using plasma | ||
*TiO<sub>2</sub> (amorphous or anatase) - mainly backup for | *TiO<sub>2</sub> (amorphous or anatase) - Thermal TiO<sub>2</sub> (mainly backup for ALD1) and TiO<sub>2</sub> using plasma | ||
*SiO<sub>2</sub> | *SiO<sub>2</sub> - SiO<sub>2</sub> using plasma | ||
*HfO<sub>2</sub> - mainly backup for | *HfO<sub>2</sub> - Thermal HfO<sub>2</sub> (mainly backup for ALD1) | ||
*AlN | *AlN - AlN using plasma | ||
*TiN | *TiN - Thermal TiN and using TiN using plamsa | ||
Is is not possible to deposit oxides and nitrides at the same time | Is is not possible to deposit oxides and nitrides at the same time | ||
|- | |- | ||