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Specific Process Knowledge/Characterization/Optical characterization: Difference between revisions

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|style="background:LightGrey; color:black"|Film thickness range
|style="background:LightGrey; color:black"|Film thickness range
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*<100 Å to 250 µm (depending of the material)
*15 nm to 70 µm (depending of the material)
*min 100nm (to measure n and k)
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!style="background:silver; color:black" align="left"|Process parameter range
!style="background:silver; color:black" align="left"|Process parameter range
|style="background:LightGrey; color:black"|Wavelength range
|style="background:LightGrey; color:black"|Wavelength range
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*400-1000 nm
*380-1050 nm
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!style="background:silver; color:black" align="left"|Substrates
!style="background:silver; color:black" align="left"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
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*One sample at a time - all sample larger than 5x5 mm<sup>2</sup>sizes up to 6"
*One sample at a time - all sample larger than a diameter of 6 mm sizes up to 6"
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| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
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*In principle all materials
*In principle all materials as long as they do not leave residuals on the system
*Only pure silicon, silicon oxides, silicon nitrides and quartz may be in direct contact with the surface of the stage. If you have metals, III-V materials or polymers on the back side of the substrate the please mount your sample on a silicon carrier wafer.
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