Specific Process Knowledge/Lithography/EBeamLithography/High resolution patterning with HSQ: Difference between revisions

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+In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.
+It is therefore not recommended to use HSQ as a trainings resist.
 The details of the process is shown below in the table:
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-It should be noticed that to reduce the broadening of patterns caused by forward and backward scattered electrons, the HSQ resist was first thinned down to below 50nm using BHF before exposure. PEC could also improve the resolution. In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.
+It should be noticed that to reduce the broadening of patterns caused by forward and backward scattered electrons, the HSQ resist was first thinned down to below 50nm using BHF before exposure. PEC could also improve the resolution.
-It is therefore not recommended to use HSQ as a trainings resist.
 The etch rate of HSQ with different concentration of BHF is shown as below.