Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions
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'''NB: Great care has to be taken in this process due to risk of bumping. Therefore it is essential, that you stir thoroughly during heat up, before you start heating, at 50°C and finally at 100°C''' | '''NB: Great care has to be taken in this process due to risk of bumping. Therefore it is essential, that you stir thoroughly during heat up, before you start heating, at 50°C, 80°C and finally at 100°C''' | ||
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[ | [https://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=377 Nitride etch info page in LabManager], | ||
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