Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

← Older editNewer edit →
VisualWikitext
Rkc (talk | contribs)
danchip
123 edits
No edit summary
Rkc (talk | contribs)
danchip
123 edits
No edit summary
Line 25: Line 25:
1-17 wafers in a run
1-17 wafers in a run
|725
|725
|230
|190
|75
|50
|25
|30
|
|0
|
|0
|Stoichiometric nitride
|Stoichiometric nitride
|-
|-
Line 36: Line 36:
1-17 wafers in a run
1-17 wafers in a run
|725
|725
|112
|190
|13
|50
|93
|30
|
|0
|
|0
|Low stress nitride (silicon rich nitride)
|Low stress nitride (silicon rich nitride)


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_LPCVD_TEOS"