Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions
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!SiO2_602 | !SiO2_602 | ||
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*CHF<sub>3</sub>-flow: 16 sccm, | |||
*O<sub>2</sub>-flow: 2 sccm, | |||
*Power = 60 W, | |||
*Vbias = 325 V, | |||
*Process pressure = 100 mTorr | |||
|30'''<sup>{(1)}</sup>''' | |||
| | |||
|29'''<sup>{(2)}</sup>''' | |||
|36'''<sup>{(3)}</sup>''' | |||
|- | |||
!?1 | |||
! | |||
*CHF<sub>3</sub>-flow: 16 sccm, | |||
*O<sub>2</sub>-flow: 2 sccm, | |||
*Power = 60 W, | |||
*Vbias = 325 V, | |||
*Process pressure = 100 mTorr | |||
|30'''<sup>{(1)}</sup>''' | |||
| | |||
|29'''<sup>{(2)}</sup>''' | |||
|36'''<sup>{(3)}</sup>''' | |||
|- | |||
!?2 | |||
! | ! | ||
*CHF<sub>3</sub>-flow: 16 sccm, | *CHF<sub>3</sub>-flow: 16 sccm, | ||