Specific Process Knowledge/Lithography/Descum

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Descum results

Plasma asher 1

Descum results plasma asher 1

Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Note: Plasma asher was cold before use

Settings Etched Thickness (nm) ashing time (min) Recipe O2 flow N2 flow Power 1 2 5 7 10 10 1 70 70 150 14,2 16,3 47,6 123,2 854,3 862,1 2 500 0 200 8,1 32,9 271,1 495,6 446,2

Conny Hjort & Jesper Hanberg September 2019

Plasma asher 2

Descum results plasma asher 2 - recipe 1

Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.

Experiment parameters:

O2 flow N2 flow Power recipe 1 100 100 150 recipe 2 500 0 200

recipe 1

Ashing time (min) 1 2 3 4 6 7 8 9 10 12 14 15 20 Etched Thickness (nm) 8,7 5,1 12,5 6,2 31,8 86,0 25,7 46,8 38,3 49,7 59,4 140,1 360,7 Initial temperature (°C) 28 21 31 21 22 28 25 24 21 24 24 22 22

Descum results plasma asher 2 - recipe 2

recipe 2

Ashing time (min) 1 2 3 4 5 6 7 8 10 12 15 20 Etched Thickness (nm) 8,1 9,4 16,8 55,2 44,0 47,5 42,5 55,1 85,3 122,4 184,8 305,9 Initial temperature (°C) 22 21 21 22 22 22 21 21 20 21 21 22

We can observe linear dependance of etched material on time after etching 7 minutes and more (recipe 2).