Specific Process Knowledge/Doping: Difference between revisions
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*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorus | *[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorus | ||
*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorus glass (PBSG) | *[[Specific Process Knowledge/Thin film deposition/PECVD/Doping|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorus glass (PBSG) | ||
*Ion implantation (not possible at | *Ion implantation (not possible at Nanolab) | ||
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