Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
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|'''Recipe''' | |'''Recipe''' | ||
|'''InP Etch 1/InP Precond 1''' | |'''InP Etch 1/InP Precond 1''' | ||
|? | |||
|- | |- | ||
|Cl<sub>2</sub> flow | |Cl<sub>2</sub> flow | ||
|20 sccm | |20 sccm | ||
|11 sccm | |||
|- | |- | ||
|N<sub>2</sub> flow | |N<sub>2</sub> flow | ||
|40 sccm | |40 sccm | ||
|20 sccm | |||
|- | |- | ||
|Ar flow | |Ar flow | ||
|10 sccm | |10 sccm | ||
|24 sccm | |||
|- | |- | ||
|Platen power | |Platen power | ||
|100 W | |100 W | ||
|120 W | |||
|- | |- | ||
|Coil power | |Coil power | ||
|500 W | |500 W | ||
|400 W | |||
|- | |- | ||
|Pressure | |Pressure | ||
|2 mTorr | |||
|2 mTorr | |2 mTorr | ||
|- | |- | ||
|Platen chiller temperature | |Platen chiller temperature | ||
|180 <sup>o</sup>C | |||
|180 <sup>o</sup>C | |180 <sup>o</sup>C | ||
|- | |- | ||
|Comment | |Comment | ||
|Use SiO2 carrier (not Si) ''(Kabi/Bghe June 2018)'' | |This is for large structures with samll aspect ratio <br> Use SiO2 carrier (not Si) ''(Kabi/Bghe June 2018)'' | ||
|This is for high aspect ratio | |||
|} | |} | ||