Specific Process Knowledge/Lithography/DUVStepperLithography/Process Instructions: Difference between revisions

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Revision as of 20:36, 25 November 2019 view source Jmli (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 4,569 edits No edit summary ← Older edit		Revision as of 20:37, 25 November 2019 view source Jmli (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 4,569 edits →Process Instructions Newer edit →
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	For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of [[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation\|optical simulation]].		For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of [[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation\|optical simulation]].

	The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of ~~Danchip~~. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.		The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Nanolab. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.