Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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|Etch rate of thermal oxide | |Etch rate of thermal oxide | ||
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*'''145-172 nm/min''' ''by bghe@ | *'''145-172 nm/min''' ''by bghe@nanolab (2015-06-02)'' | ||
*'''145 nm/min ''' ''by Martin Lind Ommen (fall 2016)'' | *'''145 nm/min ''' ''by Martin Lind Ommen (fall 2016)'' | ||
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|Selectivity to resist [:1] | |Selectivity to resist [:1] | ||
| 4-5:1 (SiO2:resist) ''by bghe@ | | 4-5:1 (SiO2:resist) ''by bghe@nanolab (2015-06-02)'' | ||
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|Cr etch rate | |Cr etch rate | ||
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|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||
|86-87 dg ''by bghe@ | |86-87 dg ''by bghe@nanolab (2015-06-02)'' | ||
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|Wafer uniformity map (click on the image to view a larger image) | |Wafer uniformity map (click on the image to view a larger image) | ||