Jump to content

Specific Process Knowledge/Lithography/DUVStepperLithography: Difference between revisions

Jmli (talk | contribs)
Taran (talk | contribs)
Line 107: Line 107:
*Positive DUV resist for spin coating in 1600-800nm thickness range [[Media:M35G_Danchip_intro.pdf|KRF M35G]].
*Positive DUV resist for spin coating in 1600-800nm thickness range [[Media:M35G_Danchip_intro.pdf|KRF M35G]].
*Negative DUV resist for spin coating in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range [[Media:UVN2300.pdf|UVN2300-0.8]].
*Negative DUV resist for spin coating in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range [[Media:UVN2300.pdf|UVN2300-0.8]].
===Quality Control (Q)===
'''THIS SECTION IS UNDER CONSTRUCTION''' [[Image:section under construction.jpg|70px]]
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Spin Coater: Gamma e-beam & UV - AR-P 6200.09 [[Image:section under construction.jpg|70px]] '''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5123&mach=359 The QC procedure for Spin Coater: Gamma e-beam & UV]<br>
*[http://labmanager.dtu.dk/view_binary.php?fileId=4210 The newest QC data for Spin Coater: Gamma e-beam & UV]
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:400px"
! QC Recipe:
! (4325) DCH 100mm CSAR 250nm
|-
|Substrate size
|4"
|-
| Resist volume
|2 ml
|-
|Spin-off speed
|2600 rpm
|-
|Spin-off time
|60 s
|-
|Soft bake temperature
|180°C, 1mm proximity
|-
|Soft bake time
|180 s
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Spin Coater: Gamma UV e-beam & UV - AR-P 6200.09
|-
|Nominal film thickness
|250 nm
|-
|Film thickness deviation from nominal
|<5%
|-
|Film thickness non-uniformity
|<5%
|-
|}
|-
|}
Spin-off speed will be adjusted if film thickness is outside the limit.
|}


===Standard processes===
===Standard processes===