Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
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* '''Spin Coater''': Do you wish to use a manual spin coater or a robot spin coater? See a list of spin coaters <u>[[Specific_Process_Knowledge/Lithography/Coaters|here]]</u>. | * '''Spin Coater''': Do you wish to use a manual spin coater or a robot spin coater? See a list of spin coaters <u>[[Specific_Process_Knowledge/Lithography/Coaters|here]]</u>. | ||
* '''Resist Type''': Choose the type of resist you wish to use: a list of UV lithography resist types available at DTU | * '''Resist Type''': Choose the type of resist you wish to use: a list of UV lithography resist types available at DTU Nanolab can be found <u>[[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|on this page]]</u>. | ||
** Positive tone resist: Resist exposed to UV light will be dissolved in the developer. The mask openings are an exact copy of the resist pattern which is to remain on the wafer. | ** Positive tone resist: Resist exposed to UV light will be dissolved in the developer. The mask openings are an exact copy of the resist pattern which is to remain on the wafer. | ||
** Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. The mask openings are an inverse copy of the resist pattern which is to remain on the wafer. | ** Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. The mask openings are an inverse copy of the resist pattern which is to remain on the wafer. | ||