Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] | [[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] | ||
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[[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]] | [[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]] | ||
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|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | |Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | ||
|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | |Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | ||
|Rapid thermal annealing | |Rapid thermal annealing | ||
|Annealing, oxidation and resist pyrolysis of different samples | |Annealing, oxidation and resist pyrolysis of different samples | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Annealing gas | !Annealing gas | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
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*Up to 500 <sup>o</sup>C | *Up to 500 <sup>o</sup>C | ||
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*20 <sup>o</sup>C - 1000 <sup>o</sup>C | *20 <sup>o</sup>C - 1000 <sup>o</sup>C | ||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
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*Small samples on a carrier wafer, horizontal | *Small samples on a carrier wafer, horizontal | ||
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*Wafers with Al | *Wafers with Al | ||
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*III-V samples | *III-V samples | ||