Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]]
[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]]
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
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[[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]]
[[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]]
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|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2.
|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2.
|Annealing of almost all materials on silicon wafers.
|Rapid thermal annealing
|Rapid thermal annealing
|Annealing, oxidation and resist pyrolysis of different samples
|Annealing, oxidation and resist pyrolysis of different samples
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Annealing gas
!Annealing gas
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*N<sub>2</sub>
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*N<sub>2</sub>
*N<sub>2</sub>
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*Up to 500 <sup>o</sup>C  
*Up to 500 <sup>o</sup>C  
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*20 <sup>o</sup>C - 1000 <sup>o</sup>C
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*20 <sup>o</sup>C - 1000 <sup>o</sup>C
*20 <sup>o</sup>C - 1000 <sup>o</sup>C
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*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
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*Small samples on a carrier wafer, horizontal
*1-25 50 mm wafers
*1-25 100 mm wafers, vertical and horizontal
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*Small samples on a carrier wafer, horizontal
*Small samples on a carrier wafer, horizontal
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*Wafers with Al  
*Wafers with Al  
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*Almost all materials, permission is needed.
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*III-V samples
*III-V samples

Revision as of 14:26, 21 February 2020

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Annealing

At DTU Nanolab we have five furnaces and an RTP (Rapid thermal annealing) that can be used annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, Noble furnace and Jipelec RTP. Annealing normally takes place in an N2 atmosphere, or it can be done in H2 or a H2-N2 gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.

A 20 minutes N2 annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.

Comparison of the annealing furnaces

Anneal Oxide furnace (C1)

Anneal-Bond furnace (C3)

Aluminium Anneal furnace (C4)

Jipelec RTP

Multipurpose Anneal Furnace

General description Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. Rapid thermal annealing Annealing, oxidation and resist pyrolysis of different samples
Annealing gas
  • N2
  • N2
  • N2
  • N2
  • Vacuum is possible
  • N2
  • H2
  • H2-N2 gas mixture
  • Vacuum is possible
Process temperature
  • 700 oC - 1100 oC
  • 700 oC - 1150 oC
  • Up to 500 oC
  • 20 oC - 1000 oC
  • Ramp up to 300 C/min
  • Vacuum: 20 oC - 1050 oC¨
  • No vacuum: 20 oC - 1100 oC
Substrate and Batch size
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 150 mm wafers
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • Small samples on a carrier wafer, horizontal
  • One 100 mm wafers on a carrier wafer
  • 1-30 50 mm, 100 mm or 150 mm wafers
  • 1-50 200 mm wafers
  • Small samples on a carrier wafer, horizontal
Allowed materials
  • All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4.
  • All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3.
  • Wafers with Al
  • III-V samples
  • Silicon wafers
  • Some metals
  • Depends on the furnace quartz ware:
    • Clean: Samples that have been RCA cleaned
    • Metal: Almost all materials, permission is needed
    • Resist pyrolysis


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