Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
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==Deposition of Silicon Nitride using LPCVD== | ==Deposition of Silicon Nitride using LPCVD== | ||
LPCVD silicon nitride can be deposited in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride|LPCVD nitride furnace]]. | LPCVD silicon nitride can be deposited in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride|LPCVD nitride furnace]]. DTU Nanolab has two LPCVD nitride furnaces: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or on 6" wafers and an older furnace (installed in 1995) for deposition of stoichiometric nitride and low stress nitride on 4" wafers. | ||
The LPCVD nitride deposition is a batch process, meaning that nitride can be deposited on a batch of up to 15 wafers (in the old nitride furnace) or 25 wafers (in the new nitride furnace) at a time. The deposition takes place at temperatures of 780-845 degrees Celsius and at a pressure of 120-200 mTorr. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces there are standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and for deposition of low stress nitride (SRN) (only on the old nitride furnace). | The LPCVD nitride deposition is a batch process, meaning that nitride can be deposited on a batch of up to 15 wafers (in the old nitride furnace) or 25 wafers (in the new nitride furnace) at a time. The deposition takes place at temperatures of 780-845 degrees Celsius and at a pressure of 120-200 mTorr. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces there are standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and for deposition of low stress nitride (SRN) (only on the old nitride furnace). | ||