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Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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'''The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:'''
'''The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:'''


[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=84 4" LPCVD nitride furnace (B2)],  
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=84 4" LPCVD nitride furnace (B2)],  


[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=250 6" LPCVD nitride furnace (E3)]
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=250 6" LPCVD nitride furnace (E3)]




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==Using LPCVD silicon nitride as a masking material for KOH etching==
==Using LPCVD silicon nitride as a masking material for KOH etching==
At Danchip stoichiometric silicon nitride is mainly used as masking material for potassium hydroxide (KOH) etching. The etch rate of the nitride in 80 <sup>o</sup>C KOH is expected to be less than 1 Å/min.  
Stoichiometric silicon nitride is mainly used as masking material for potassium hydroxide (KOH) etching. The etch rate of the nitride in 80 <sup>o</sup>C KOH is expected to be less than 1 Å/min.  


There are regularly users having problems with pinholes in the silicon nitride after KOH etching. It is not always clear what the reasons are, but we suspect problems can arise due to  
There are regularly users having problems with pinholes in the silicon nitride after KOH etching. It is not always clear what the reasons are, but we suspect problems can arise due to  
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'''To avoid too many or too large particles in the nitride'''<br\>
'''To avoid too many or too large particles in the nitride'''<br\>
*If possible, use the new nitride furnace to deposit stoichiometric nitride. In order to avoid problems with particles it is not allowed to deposit low stress nitride in this furnace, and the particles level is therefore low compared to the older nitride furnace.  
*If possible, use the new nitride furnace to deposit stoichiometric nitride. In order to avoid problems with particles it is not allowed to deposit low stress nitride in this furnace, and the particles level is therefore low compared to the older nitride furnace.  
*Before running a process keep in close contact with the Danchip staff (especially the process specialist on the furnace) or take a look at the logbook to make sure that the nitride furnace is expected to be in a good state.
*Before running a process keep in close contact with the Nanolab staff (especially the process specialist on the furnace) or take a look at the logbook to make sure that the nitride furnace is expected to be in a good state.


'''To avoid too rough handling of the wafers after the nitride deposition'''<br\>
'''To avoid too rough handling of the wafers after the nitride deposition'''<br\>