Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
Appearance
No edit summary |
|||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/InP-InGaAsP-InGaAs click here]''' | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/InP-InGaAsP-InGaAs click here]''' | ||
== InP etch with HBr chemistry== | == InP etch with HBr chemistry (2019)== | ||
Work done by Aurimas Sakanas @Fotonik.dtu 2019. This work was done to obtain very low surface roughness. | Work done by Aurimas Sakanas @Fotonik.dtu 2019. This work was done to obtain very low surface roughness. | ||
{| border="1" cellspacing="2" cellpadding="3" | {| border="1" cellspacing="2" cellpadding="3" | ||
| Line 68: | Line 68: | ||
</gallery> | </gallery> | ||
== InP etch with Cl2/H2 and a Si carrier wafer [[Image:section under construction.jpg|70px]] == | == InP etch with Cl2/H2 and a Si carrier wafer [[Image:section under construction.jpg|70px]] == | ||
''Work done by Berit Herstrøm @Nanolab spring 2019'' | ''Work done by Berit Herstrøm @Nanolab spring 2019'' | ||