Specific Process Knowledge/Thin film deposition: Difference between revisions

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*[[/Leybold|Leybold]] - ''E-beam evaporator and multiple wafer tool''  
*[[/Leybold|Leybold]] - ''E-beam evaporator and multiple wafer tool''  
*[[/Wordentec|Wordentec]] - ''E-beam evaporator, sputter and thermal evaporator''
*[[/Wordentec|Wordentec]] - ''E-beam evaporator, sputter and thermal evaporator''
*[[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE/IBSD Ionfab 300]] - ''Sputter deposition of high quality optical layers and milling/etching''
*[[/Hummer|Hummer]] - ''Gold sputtering system''
*[[/Hummer|Hummer]] - ''Gold sputtering system''
*[[/PECVD|PECVD]] - ''Plasma Enhanced Chemical Vapor deposition''
*[[/PECVD|PECVD]] - ''Plasma Enhanced Chemical Vapor deposition''

Revision as of 07:43, 7 April 2011

Choose material to deposit

Dielectrica

Metals/elements

Period/Group

IVB VB VIB VIIIB IB IIIA IVA
3 . . . . . 13 Al Aluminium 14 Si Silicon
4 22 Ti Titanium . 24 Cr Chromium 28 Ni Nickel 29 Cu Copper . .
5 . . . 46 Pd Palladium 47 Ag Silver . 50 Sn Tin
6 . 73 Ta Tantalum 74 W Tungsten 78 Pt Platinum 79 Au Gold . .

Alloys

  • TiW alloy (10%/90% by weight)

Polymers

  • SU8
  • Antistiction coating
  • Topas
  • PMMA


Choose deposition equipment

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