Specific Process Knowledge/Thin film deposition: Difference between revisions

From LabAdviser
BGE (talk | contribs)
BGE (talk | contribs)
Line 75: Line 75:
*[[/Hummer|Hummer]] - ''Gold sputtering system''
*[[/Hummer|Hummer]] - ''Gold sputtering system''
*[[/PECVD|PECVD]] - ''Plasma Enhanced Chemical Vapor deposition''
*[[/PECVD|PECVD]] - ''Plasma Enhanced Chemical Vapor deposition''
*[[/Furnace LPCVD Nitride (6")|Furnace LPCVD Nitride (6")]] - ''Deposition of silicon nitride''
*[[/B2 Furnace LPCVD Nitride|Furnace LPCVD Nitride (6")]] - ''Deposition of silicon nitride''
*[[/B2 Furnace LPCVD Nitride|B2 Furnace LPCVD Nitride]] - ''Deposition of silicon nitride''
*[[/B2 Furnace LPCVD Nitride|B2 Furnace LPCVD Nitride]] - ''Deposition of silicon nitride''
*[[/B3 Furnace LPCVD TEOS|B3 Furnace LPCVD TEOS]] - ''Deposition of silicon oxide''
*[[/B3 Furnace LPCVD TEOS|B3 Furnace LPCVD TEOS]] - ''Deposition of silicon oxide''
*[[/B4 Furnace LPCVD PolySilicon|B4 Furnace LPCVD PolySilicon]] - ''Deposition of polysilicon''
*[[/B4 Furnace LPCVD PolySilicon|B4 Furnace LPCVD PolySilicon]] - ''Deposition of polysilicon''
*[[/MVD|MVD]] - ''Molecular Vapor Deposition''
*[[/MVD|MVD]] - ''Molecular Vapor Deposition''

Revision as of 08:11, 20 January 2009

Choose material to deposit

Dielectrica

Metals/elements

Period/Group

IVB VB VIB VIIIB IB IIIA IVA
3 . . . . . 13 Al Aluminium 14 Si Silicon
4 22 Ti Titanium . 24 Cr Chromium 28 Ni Nickel 29 Cu Copper . .
5 . . . 46 Pd Palladium 47 Ag Silver . 50 Sn Tin
6 . 73 Ta Tantalum 74 W Tungsten 78 Pt Platinum 79 Au Gold . .

Alloys

  • TiW alloy (10%/90% by weight)

Polymers

  • SU8
  • Antistiction coating
  • Topas
  • PMMA


Choose deposition equipment