Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
| Line 4: | Line 4: | ||
LPCVD silicon nitride can be deposited in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride|LPCVD nitride furnace]]. Danchip has two LPCVD nitride furnaces: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or on 6" wafers and an older furnace (installed in 1995) for deposition of stoichiometric nitride and low stress nitride on 4" wafers. | LPCVD silicon nitride can be deposited in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride|LPCVD nitride furnace]]. Danchip has two LPCVD nitride furnaces: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or on 6" wafers and an older furnace (installed in 1995) for deposition of stoichiometric nitride and low stress nitride on 4" wafers. | ||
The LPCVD nitride deposition is a batch process, meaning that | The LPCVD nitride deposition is a batch process, meaning that nitride can be deposited on a batch of up to 17 wafers (in the old nitride furnace) or 25 wafers (in the new nitride furnace) at a time. The deposition takes place at temperatures of 780-845 degrees Celsius and at a pressure of 120-200 mTorr. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces there are standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) (at the moment only on the new nitride funace) and for deposition of low stress nitride (SRN) (only on the old nitride funace). | ||
*[[/Deposition of Silicon Nitride using LPCVD|Deposition of Silicon Nitride using LPCVD]] | *[[/Deposition of Silicon Nitride using LPCVD|Deposition of Silicon Nitride using LPCVD]] | ||