Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions
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! style="background:WhiteSmoke; color:black" | Primary uses | ! style="background:WhiteSmoke; color:black" | Primary uses | ||
| style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed. | | style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed. | ||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 4" wafers | |||
| style="background:WhiteSmoke; color:black"| Silicon etching of 4" wafers | |||
| style="background:WhiteSmoke; color:black"| Research tool into silicon etching | |||
| style="background:WhiteSmoke; color:black"| Silicon etching of 6" wafers on 6" wafers | |||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides | | style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides | ||
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo | | style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo | ||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | | style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | ||