Specific Process Knowledge/Lithography/Descum: Difference between revisions
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===Plasma asher 2 === | ===Plasma asher 2 === | ||
[[image:descum_graf.jpg|right|frame|355x355px|Descum results plasma asher 2]] | [[image:descum_graf.jpg|right|frame|355x355px|Descum results plasma asher 2 - experiment 1]] | ||
Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber. | Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber. | ||
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{| border="1" cellspacing="1" cellpadding="2" align="center" | {| border="1" cellspacing="1" cellpadding="2" align="center" | ||
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|O2 flow|| N2 flow || Power | | ||O2 flow|| N2 flow || Power | ||
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| 100 || 100 || 150 | |'''experiment 1''' || 100 || 100 || 150 | ||
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|'''experiment 2''' || 500 || 0 || 200 | |||
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Revision as of 13:50, 12 December 2019
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Descum results
Plasma asher 1
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
Note: Plasma asher was cold before use
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Conny Hjort & Jesper Hanberg September 2019
Plasma asher 2
Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.
Experiment parameters:
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