Specific Process Knowledge/Lithography/Strip: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip click here]''' | ||
= Strip Comparison Table = | = Strip Comparison Table = | ||
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[[Image:plasmaasher2.JPG|300x300px|thumb|The Plasma Asher 1 is placed in C-1]] | [[Image:plasmaasher2.JPG|300x300px|thumb|The Plasma Asher 1 is placed in C-1]] | ||
'''Feedback to this section''': '''[mailto:labadviser@ | '''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_asher click here]''' | ||
The Plasma Asher 1 (TePla 300 auto load model) can be used for the following process: | The Plasma Asher 1 (TePla 300 auto load model) can be used for the following process: | ||
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*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching | *Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching | ||
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE | *Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE | ||
*Removal of organic | *Removal of organic passivation layers and masks | ||
*Etching of glass and ceramic | *Etching of glass and ceramic | ||
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si | *Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si | ||
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The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip. | The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip. | ||
'''The user manual, user APV, and contact information can be found in [http://labmanager | '''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=55 LabManager]''' | ||
===Process Information=== | ===Process Information=== | ||
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[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in E-5]] | [[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in E-5]] | ||
'''Feedback to this section''': '''[mailto:labadviser@ | '''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_2 click here]''' | ||
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates. | The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates. | ||
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A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18. | A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18. | ||
A Descum process in manual mode: O2:70, N2:70, power:150W, time: | A Descum process in manual mode: O2:70, N2:70, power:150W, time:10 min | ||
Be sure to wait for cooling if the mashine has been used at 1000W right before. | Be sure to wait for cooling if the mashine has been used at 1000W right before. | ||
At a load at 2 Fused | At a load at 2 Fused silica wafers resist removed 0.01-01,5um | ||
The other materials have not been tested yet. | The other materials have not been tested yet. | ||
'''The user manual, user APV, and contact information can be found in [http://labmanager | '''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager]''' | ||
===Process Information=== | ===Process Information=== | ||
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[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]] | [[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]] | ||
'''Feedback to this section''': '''[mailto:labadviser@ | '''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#III-V_Plasma_Asher click here]''' | ||
Diener Pico Plasma Asher for III-V materials. | Diener Pico Plasma Asher for III-V materials. | ||
'''The user manual and contact information can be found in [http://labmanager | '''The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager]''' | ||
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[[Image:Resist_strip.jpg|300x300px|thumb|Acetone strip bench in D-3]] | [[Image:Resist_strip.jpg|300x300px|thumb|Acetone strip bench in D-3]] | ||
'''Feedback to this section''': '''[mailto:labadviser@ | '''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Rough_and_Fine_Strip click here]''' | ||
This resist strip is only for wafers without metal and SU-8. | This resist strip is only for wafers without metal and SU-8. | ||
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'''The user manual and contact information can be found in LabManager: [http://labmanager | '''The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip]''' | ||
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