Specific Process Knowledge/Lithography/Descum: Difference between revisions
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===Plasma asher 1 === | ===Plasma asher 1 === | ||
[[image:Descum Results aug 2019.png| | [[image:Descum Results aug 2019.png|400x400px|thumb| Descum results plasma asher 1]] | ||
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer. | Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer. | ||
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Conny Hjort & Jesper Hanberg | Conny Hjort & Jesper Hanberg | ||
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===Plasma asher 2 === | ===Plasma asher 2 === | ||
[[image:descum_graf.jpg|400x400px|thumb|Descum results plasma asher 2]] | |||
Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber. | Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber. | ||
Experiment parameters: | |||
{| {{table}} | {| {{table}} | ||
| align="center" | | | align="center" | | ||
{| border="1" cellspacing="1" cellpadding="2" align="center" | {| border="1" cellspacing="1" cellpadding="2" align="center" | ||
|- style="background:LightGrey" | |- style="background:LightGrey" | ||
|O2 flow|| N2 flow || Power | |O2 flow|| N2 flow || Power | ||
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| 100 || 100 || 150 | | 100 || 100 || 150 | ||
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|'''Initial temperature (°C)'''|| 28 || 21 || 31 || 21 || 22 || 28 || 25 || 24 || 21 || 24 || 24 || 22 || 22 | |'''Initial temperature (°C)'''|| 28 || 21 || 31 || 21 || 22 || 28 || 25 || 24 || 21 || 24 || 24 || 22 || 22 | ||
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