Specific Process Knowledge/Lithography/Descum: Difference between revisions

Revision as of 14:46, 19 November 2019

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Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Note: Plasma asher was cold before use

Conny Hjort & Jesper Hanberg September 2019

Etched Thickness (nm)
ashing time (min)
1	2	3	4	6	7	8	9	10	12	14	15	-	1	70	70	150	14,2	16,3	47,6	123,2	854,3	862,1

@@ Line 75: / Line 75: @@
 ! colspan="13" | ashing time (min)
 |- style="background:LightGrey"
-|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20 ||
+|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20 |-
-|-
 | 1 || 70 || 70 || 150 || 14,2 || 16,3 || 47,6 || 123,2 || 854,3 || 862,1
 |-
 |}