Specific Process Knowledge/Lithography/Descum: Difference between revisions
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! colspan="13" | Etched Thickness (nm) | ! colspan="13" | Etched Thickness (nm) | ||
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! colspan=" | ! colspan="13" | ashing time (min) | ||
|- style="background:LightGrey" | |- style="background:LightGrey" | ||
|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20 || | || 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20 || | ||
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| 1 || 70 || 70 || 150 || 14,2 || 16,3 || 47,6 || 123,2 || 854,3 || 862,1 | | 1 || 70 || 70 || 150 || 14,2 || 16,3 || 47,6 || 123,2 || 854,3 || 862,1 | ||
|- | |- | ||
|} | |} | ||
Revision as of 14:46, 19 November 2019
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Descum results
Plasma asher 1
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
Note: Plasma asher was cold before use
Plasma asher 2
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