Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
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==Using PECVD== | ==Using PECVD== | ||
PECVD nitride can be deposited in one of the PECVD systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees celcius. This can be a off importance for some applications but it give a less dense film that is non-stoichiometric. then form is more like SixNyHz. The stepcoverage and thickness uniformity of the film is not as good as for the LPCVD nitride. | PECVD nitride can be deposited in one of the PECVD systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees celcius. This can be a off importance for some applications but it give a less dense film that is non-stoichiometric. then form is more like SixNyHz. The stepcoverage and thickness uniformity of the film is not as good as for the LPCVD nitride. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, this is not allowed in the LPCVD and in hte other PECVD (PECVD1). | ||
==Using sputter deposition== | ==Using sputter deposition== | ||