Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions
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Acceptance criteria on a 100 X 100 mm<sup>2</sup> area: Width of smallest resolved line 600±100 nm, alignment error 500 nm, writing speed 285 mm<sup>2</sup>/min. | Acceptance criteria on a 100 X 100 mm<sup>2</sup> area: Width of smallest resolved line 600±100 nm, alignment error 500 nm, writing speed 285 mm<sup>2</sup>/min. | ||
The acceptance test also included a verification of back side alignment (better than 1 µm), as well as functionality tests of grayscale and high aspect ratio mode. | The acceptance test also included a verification of back side alignment (better than 1 µm), as well as functionality tests of grayscale and [[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#High_Aspect_Ratio_.28DOF.29_mode|high aspect ratio mode]]. | ||
'''Exposed on mask blank with 0.5 µm AZ1500 (possibly S1800) at DTU, then transferred via wet chrome etch and measured at Heidelberg''' | '''Exposed on mask blank with 0.5 µm AZ1500 (possibly S1800) at DTU, then transferred via wet chrome etch and measured at Heidelberg''' | ||