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Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
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|Comment
|Comment
|Sample placed on a Si carrier
|Sample placed on a Si carrier
|-
|Other tests made
|
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|Selectivity (InP:SiO2 (PECVD 500nm)
|Selectivity (InP:SiO2 (PECVD 500nm)
| approx.17:1
| approx.17:1
|-
|-
|Other tests made
|Comparing of this Cl2/H2 recipe with HBr recipe on e-beamed structures ''(By Aurimas Sakana @photonic (nov 2019))
''
|-
|-
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</gallery>
</gallery>
*Comparing of this Cl2/H2 recipe with HBr recipe on e-beamed structures ''(By Aurimas Sakana @photonic (nov 2019))
''


=== InP etch with Cl2/CH4/Ar 2013===
=== InP etch with Cl2/CH4/Ar 2013===
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