Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by sputter technique or ALD. You can also make a silicon oxide layer by growing a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace but that requires a silicon surface as a starting point. | Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by sputter technique or ALD. You can also make a silicon oxide layer by growing a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace but that requires a silicon surface as a starting point. | ||
==Deposition of Silicon Oxide using LPCVD== | ==Deposition of Silicon Oxide using LPCVD== | ||
The LPCVD oxide you can deposit at | The LPCVD oxide you can deposit at DTU Nanolab is called TEOS oxide. It can be made in the [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS|LPCVD TEOS furnace]]. It is a batch process meaning you can run a batch of 13 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The TEOS oxide has good step coverage and hole filing/covering properties and the film thickness is very uniform over the wafer. We have two standard TEOS processes: One for depositing standard layers ~(0-1.5 µm) and one for deposition thick layers ~(1.5µm-4µm). The TEOS oxide has a dielectric constant very close to the one for thermal oxide (3.65 for TEOS). | ||
*[[/Deposition of Silicon Oxide using LPCVD TEOS|Deposition of Silicon Oxide using LPCVD TEOS]] | *[[/Deposition of Silicon Oxide using LPCVD TEOS|Deposition of Silicon Oxide using LPCVD TEOS]] | ||