Specific Process Knowledge/Lithography/Descum: Difference between revisions

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Conny Hjort & Jesper Hanberg
Conny Hjort & Jesper Hanberg
September 2019
September 2019

Revision as of 15:42, 21 October 2019

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Descum results

Plasma asher 1

Descum results

Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Note: Plasma asher was cold before use

Settings Etched Thickness (nm)
ashing time (min)
Recipe O2 flow N2 flow Power 1 2 5 7 10 10
1 70 70 150 14,2 16,3 47,6 123,2 854,3 862,1
2 500 0 200 8,1 32,9 271,1 495,6 446,2


Conny Hjort & Jesper Hanberg September 2019

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