Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
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<gallery widths=" | <gallery widths="250px" heights="200px" perrow="2"> | ||
Image:Picture1.jpg|200 nm wide line structure, t<sub>etch</sub>=25 s | Image:Picture1.jpg|200 nm wide line structure, t<sub>etch</sub>=25 s | ||
Image:Picture2.jpg|900 nm wide line structure, t<sub>etch</sub>=2 min <br> | Image:Picture2.jpg|900 nm wide line structure, t<sub>etch</sub>=2 min <br> | ||
</gallery> | </gallery> | ||
<gallery widths=" | <gallery widths="250px" heights="200px" perrow="3"> | ||
Image:Picture4.jpg|200 nm wide line structure, t<sub>etch</sub>=2 min | Image:Picture4.jpg|200 nm wide line structure, t<sub>etch</sub>=2 min | ||
Image:Picture5.jpg|400 nm wide line structure, t<sub>etch</sub>=2 min | Image:Picture5.jpg|400 nm wide line structure, t<sub>etch</sub>=2 min | ||
Image:Picture6.jpg|1 µm wide line structure, t<sub>etch</sub>=2 min <br> | Image:Picture6.jpg|1 µm wide line structure, t<sub>etch</sub>=2 min <br> | ||
</gallery> | </gallery> | ||
<gallery widths=" | <gallery widths="250px" heights="200px" perrow="4"> | ||
Image:Picture3.jpg|Two 1 µm wide line structure, 300 nm gap, t<sub>etch</sub>=25 s | Image:Picture3.jpg|Two 1 µm wide line structure, 300 nm gap, t<sub>etch</sub>=25 s | ||
Image:Picture7.jpg|Two 1 µm wide line structure, 300 nm gap, t<sub>etch</sub>=2 min | Image:Picture7.jpg|Two 1 µm wide line structure, 300 nm gap, t<sub>etch</sub>=2 min | ||