Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
New page: Deposition of Silicon Nitride can be done with either LPCVD, PECVD or sputter deposition. ==Using LPCVD== LPCVD nitride can be made in the LPCVD nitride furnace. It is a batch process mea... |
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==Using PECVD== | ==Using PECVD== | ||
PECVD nitride can be deposited in one of the PECVD systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees celcius | PECVD nitride can be deposited in one of the PECVD systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees celcius. This can be a off importance for some applications but it give a less dense film that is non-stoichiometric. then form is more like SixNyHz. The stepcoverage and thickness uniformity of the film is not as good as for the LPCVD nitride. | ||
==Using sputter deposition== | ==Using sputter deposition== | ||