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==Recipes for dry oxidation==
The oxidation furnaces in the cleanroom are being used for dry and wet oxidation of silicon wafers.  
 
Dry oxidation of silicon wafers can be done in these furnaces:
* A1 Boron Drive-in and Pre-dep
* A2 Gate Oxide
* A3 Phosphorus Drive-in
* C1 Anneal Oxide
* C3 Anneal Bond
* C4 Al-Anneal
 
The recipes for dry oxidation are very similar on these furnaces.
 
The oxidation and annealing times are variable commands. It means that these can be changed by the users. The maximum allowed oxidation time is ...
 
The oxidation temperatures are fixed in the recipes. The temperature can be seen in the recipe name, e.g. "DRY1000" for dry oxidation at 1000 C.  


On this page the steps in the standard oxidation recipes on the furnaces will be listet.
   
   


 
===Dry oxidation can be done in the these furnaces:===
The oxidation furnaces in the cleanroom are being used for dry and wet oxidation of silicon wafers.
 
Dry oxidation can be done in the these furnaces:


*A1 Boron Drive-in and Pre-dep furnace  
*A1 Boron Drive-in and Pre-dep furnace  
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*Multipurpose Anneal furnace
*Multipurpose Anneal furnace


Wet oxidation can be done in these furnaces:
The dry oxidation recipes in the A- and C-stack furnaces are very similar and will be described on this page.
 
There are no standard recipes on the Multipurpose Anneal furnace, so no oxidation recipes will be described here.
 
 
===Wet oxidation can be done in these furnaces:===


*A1 Boron Drive-in and Pre-dep furnace  
*A1 Boron Drive-in and Pre-dep furnace  
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*C1 Anneal-Oxide furnace  
*C1 Anneal-Oxide furnace  
*C2 III-V Oxidation furnace  
*C2 III-V Oxidation furnace  
*C3 Annea-Bond furnace  
*C3 Anneal-Bond furnace  


On this page the steps in the standard oxidation recipes on the furnaces will be listet.  
The wet oxidation recipes in the A-stack, C1 and C3 furnaces are very similar.  


Dry oxidation of III-V samples can be done in the C2 III-V Oxidation furnace, more information can be found here:  
Wet oxidation of III-V sample in the C2 furnace is described here:


http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)
http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)


Dry oxidation of silicon and other materials can be done in the Multipurpose Anneal furnace and the Noble furnace, but there are not really any standard recipes on these furnaces.


===General recipe remarks:===
The oxidation temperature is fixed in each recipe. The temperature can be seen in the recipe name, e.g. "DRY1000" for dry oxidation at 1000 C and "WET1100" for wet oxidation at 1100 C.


The oxidation and annealing times are variable commands in oxidation recipe. It means that these can be changed by the users.
The oxid thickness is defined by the oxidation time. Wet oxidation is much faster then dry oxidation. It is maximum allowed to grow 300 nm of dry oxide and 3 um of wet oxidation.
The annealing improves... The standard annealing time is 20 minutes, but it is possible to change the time.






===Dry oxidation recipe steps===
==Dry oxidation recipe steps==


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