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Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions

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![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP metal]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP metal]]
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
![[Specific Process Knowledge/Etch/HF Vapour Phase Etch|HF Vapour Phase Etch]]


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*Primarily for pure physical etch by sputtering with Ar-ions
*Primarily for pure physical etch by sputtering with Ar-ions
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*This is a fact about HF VPE
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*Any material that is accepted in the machine
*Any material that is accepted in the machine
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*HF VPE mask material 1
*HF VPE mask material 2
*HF VPE mask material 3
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*Process dependent
*Process dependent
*Tested once ~22nm/min
*Tested once ~22nm/min
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*Sample and load dependent
*Expected range: 12 - 175 nm/min
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*<nowiki>#</nowiki>1 150 mm wafers with special carrier
*<nowiki>#</nowiki>1 150 mm wafers with special carrier
*<nowiki>#</nowiki>1 200 mm wafer
*<nowiki>#</nowiki>1 200 mm wafer
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*Pieces
*<nowiki>#</nowiki>1 50 mm wafer
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki>1 150 mm wafer
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*Polymers
*Polymers
*Capton tape
*Capton tape
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*[http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=458 Please take a look in the cross contamination sheet in LabManager for details]
*Silicon
*Silicon oxides
*Aluminium
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