Specific Process Knowledge/Lithography/Descum: Difference between revisions
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===Plasma asher 1 === | ===Plasma asher 1 === | ||
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer. | |||
Note: Plasma asher was cold before use | |||
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Revision as of 11:17, 30 August 2019
Descum results
Plasma asher 1
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
Note: Plasma asher was cold before use
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