Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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==Oxidation== | ==Oxidation== | ||
At | At DTU Nanolab we have seven furnaces for thermal oxidation of silicon samples: Boron Drive-in + Pre-dep furnace (A1), Gate Oxide furnace (A2), Phosphorous Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C3), Multipurpose Annealing furnace and Noble furnace. | ||
Thermal oxidation can take place either by a dry process or a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for | Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for dry oxidation. | ||
*Dry oxidation is used to grow 5 nm - 300 nm of oxide in the furnaces: A1, A2, A3, C1, C3, C4, Multipurpose Anneal and Noble. | |||
*Wet oxidation is used to grow up to 3 µm of oxide in the furnaces: A1, A3, C1 and C3. | |||
*Wafers with oxide layers thicker than >3 µm cannot be made in the cleanroom and will have to be bought (but check the wafer shop first - there might be some on stock). | |||
Thermal oxidation can done at temperatures up to 1150 C (but only 1100 C in C1 and Multipurpose Anneal furnace and 1000 C in the Noble furnace). At these very high temperatures, the quartz tube in the furnaces might start to deform, so therefore the oxidation times are restricted: | |||
*Maximum allowed oxidation time at 1150 C: 8 hours | |||
*Maximum allowed oxidation time at 1100 C: 23 hours (this will result in ~3 um wet oxide) | |||
The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here: | The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here: | ||
*[[Specific Process Knowledge/Thermal Process/A1 Furnace Boron drive-in|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]] | *[[Specific Process Knowledge/Thermal Process/A1 Furnace Boron drive-in|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]] | ||
*[[Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace|Standard recipes, QC limits and results for the Phosphorus Drive-in furnace (A3)]] | *[[Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace|Standard recipes, QC limits and results for the Phosphorus Drive-in furnace (A3)]] | ||
The wet oxidation rates for the Anneal-Bond furnace (C1) can be found here: | The wet oxidation rates for the Anneal-Bond furnace (C1) can be found here: | ||
*[[Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace|Wet oxidation in Anneal-oxide furnace (C1)]] | *[[Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace|Wet oxidation in Anneal-oxide furnace (C1)]] | ||
==Standard recipes in the oxidation furnaces== | ==Standard recipes in the oxidation furnaces== | ||