Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch using HF: Difference between revisions
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Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below. | Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below. | ||
<gallery caption=" | <gallery caption="Attempt to dissolve Al<sub>2</sub>O<sub>3</sub> using HF." widths="600px" heights="500px" perrow="1"> | ||
image:Al2O3_HF_20190826.png| | image:Al2O3_HF_20190826.png| Different etching rates for different HF concentrations. | ||
</gallery> | </gallery> | ||
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The etch rates: | The etch rates: | ||
<ul> | <ul> | ||
<li> 5% HF: 1.74 nm/s </li> | <li> 5% HF: <b>1.74 nm/s</b> </li> | ||
<li> 1vol. H<sub>2</sub>O : 1vol. 5% HF 1.05 nm/s </li> | <li> 1vol. H<sub>2</sub>O : 1vol. 5% HF <b>1.05 nm/s</b> </li> | ||
<li> 2vol. H<sub>2</sub>O : 1vol. 5% HF 0.72 nm/s </li> | <li> 2vol. H<sub>2</sub>O : 1vol. 5% HF <b>0.72 nm/s</b> </li> | ||
</ul> | </ul> | ||