Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch using HF: Difference between revisions
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Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below. | Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below. | ||
<gallery caption="XPS results." widths="600px" heights=" | <gallery caption="XPS results." widths="600px" heights="500px" perrow="1"> | ||
image:Al2O3_HF_20190826.png| Survey scan of Al thin film with native oxide. No Ar<sup>+</sup> sputtering applied. Substrate: Silicon 4" wafer with native oxide. | image:Al2O3_HF_20190826.png| Survey scan of Al thin film with native oxide. No Ar<sup>+</sup> sputtering applied. Substrate: Silicon 4" wafer with native oxide. | ||
</gallery> | </gallery> | ||