Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch using HF: Difference between revisions
No edit summary |
No edit summary |
||
| Line 9: | Line 9: | ||
Si samples with about 100 nm of ALD deposited Al<sub>2</sub>O<sub>3</sub> has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below. | Si samples with about 100 nm of ALD deposited Al<sub>2</sub>O<sub>3</sub> has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below. | ||
[[image:AL203_Hf_etch.jpg|300x300px|left|thumb|xxx]] | |||