Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch using HF: Difference between revisions
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A wet chemical etch of Al<sub>2</sub>O<sub>3</sub> can be done with HF. The etch rate depends on the HF concentration. | |||
=== Experiment and results === | |||
Si samples with about 100 nm of ALD deposited Al<sub>2</sub>O<sub>3</sub> has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below. | |||
Be aware of that the 5% HF etches quite fast - Actually so fast that it can be tricky to control the etch. Just imagine, you take a sample out of solution and place it in a bigger water container to rinse, and during that movement, the etch continues… So the handling things around the fumehood can be a source of errors. | |||
''Evgeniy Shkondin, DTU Nanolab, June 2019'' | |||