Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
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==Deposition of Silicon Nitride using LPCVD== | ==Deposition of Silicon Nitride using LPCVD== | ||
LPCVD silicon nitride can be deposited in | LPCVD silicon nitride can be deposited in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride|LPCVD nitride furnace]]. Danchip has two LPCVD nitride furnaces: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or on 6" wafers and an older furnace (installed in 1995) for deposition of stoichiometric nitride and low stress nitride on 4" wafers. | ||
The LPCVD nitride deposition is a batch process, meaning that you can run a batch of up to 25-35 wafers at a time. The deposition takes place at temperatures of 780-850 degrees Celsius, and at a pressure of 200-230 mTorr. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces we have standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and for deposition of low stress nitride (SRN) (only on the old nitride funace). | The LPCVD nitride deposition is a batch process, meaning that you can run a batch of up to 25-35 wafers at a time. The deposition takes place at temperatures of 780-850 degrees Celsius, and at a pressure of 200-230 mTorr. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces we have standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and for deposition of low stress nitride (SRN) (only on the old nitride funace). | ||