Specific Process Knowledge/Thin film deposition/Physimeca/Physimeca calibration: Difference between revisions
No edit summary |
No edit summary |
||
Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Physimeca/Physimeca_calibration click here]''' | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Physimeca/Physimeca_calibration click here]''' | ||
'''Thin film is unsure whether this is still | '''Thin film is unsure whether this is still being used or not''' | ||
== Calibration of Physimeca == | == Calibration of Physimeca == |
Revision as of 09:39, 15 August 2019
Feedback to this page: click here
Thin film is unsure whether this is still being used or not
Calibration of Physimeca
As of 16/6/2008 we will use a new system to compensate for "drift" without having to change e.g. 20 gold programs for each refilling. The power setting during deposition is a fraction of the "auto-emission current" on the genius system. In order to compensate for drift in the system the auto and max emission current on the genius is adjusted to achieve the rates at the set powers below This way it should not be necessary to adjust the programs every time, but experienced users will have to occasionally adjust the genius setting.
Reference deposition (step) | Material | Rate (Å/s) | At power (%) | Example of max emission current (6-2008) | ||
mA | ~mA for rate | |||||
Ti100nm-5A-cal | Ti | 1 | 5 | 70 | 160 | 112 |
Pt100nm-5A-cal | Pt | 2 | 5 | 80 | 460 | 368 |
Au100nm-10A-cal | Au | 3 | 10 | 80 | 450 | 360 |
Ni100nm-5A-cal | Ni | 4 | 5 | 70 | 250 | 175 |
Ge100nm-5A-cal | Ge | 5 | 5 | 70 | 190 | 133 |
Cr100nm-5A-cal | Cr | 6 | 5 | 70 | 110 | 77 |
Pd100nm-5A-cal | Pd | 6 | 5 | 70 | 160 | 112 |
The tooling factor has been determined to ~110 for 100nm layers (lot, 6-2008). It will of course have a small dependence on material and rate.
You can use the steps above as starting point when making new programs (other thicknesses, rates, tilt etc.)
Changing auto and emission current (experienced users only)
If the actual power during deposition is significantly different than the target value (e.g. off by a few % you may change the genius values).
Calculate new auto emission current: Inew="good" current during deposition / target power, e.g. 167mA/0.7 = 240mA (new max emission)
- Use genius remote:
- Switch to manual mode.
- Switch to chosen material
- Go to set data and down to auto emission and max emission .
- Change both to the new value and note this in the user log.
- Go to save/load and save values
- Switch back to remote mode on genius.